Semiconductor element, method for manufacturing the same, liquid crystal display device, and method for manufacturing the same

ABSTRACT

In case that a conventional TFT is formed to have an inversely staggered type, a resist mask is required to be formed by an exposing, developing, and droplet discharging in forming an island-like semiconductor region. It resulted in the increase in the number of processes and the number of materials. According to the present invention, a process can be simplified since after forming a source region and a drain region, a portion serving as a channel region is covered by an insulating film serving as a channel protecting film to form an island-like semiconductor film, and so a semiconductor element can be manufactured by using only metal mask without using a resist mask.

TECHNICAL FIELD

The present invention relates to a semiconductor element using a dropletdischarging as typified by ink jetting, and a method for manufacturingthe same. More particularly, the present invention relates to asemiconductor element that is used for a display device as typified by aliquid crystal display device or an electroluminescent display device,and a method for manufacturing the same.

BACKGROUND ART

In manufacturing a semiconductor element, it has been considered thepossibilities of using a droplet discharge device for forming a patternof a thin film or a wiring, each of which is used for a semiconductorelement, to reduce costs for equipment and to simplify a manufacturingprocess.

In this instance, various wirings such as a gate electrode, a scanningline, a signal line, and a pixel electrode for forming a semiconductorelement are formed according to the procedure, that is, a compositeformed by dissolving or dispersing a conductive material into a solventis discharged from a nozzle of a droplet discharge device to the aboveof a substrate or a film so as to directly draw such various wirings(See, for example, Japanese Patent Application Laid-open No.2003-126760).

To manufacture a semiconductor element such as a thin film transistor(TFT) that is used for a display device as typified by an active matrixliquid crystal display (LCD) device or an active matrixelectroluminescent display device, it has been required to establish astructure and a process that are most appropriate to droplet dischargingand that are different from a TFT manufactured by conducting repeatedlya film formation process, a patterning process, and an etching process.It has been required to simplify the structure and the process of a TFTmanufactured by a droplet discharging with the increase in the size of aTFT substrate, for example, a substrate of more than 1×1 m or twice orthree times as large as that.

Especially, in case that the foregoing TFT is formed to have aninversely staggered type (bottom gate type) as typified by a channelprotecting type or a channel etching type, a semiconductor film and asemiconductor film containing n-type impurities are formed all over asubstrate; and the formed semiconductor films are etched using a resistmask to form an island-like semiconductor region; then, the formedsemiconductor film containing n-type impurities is divided into a sourceregion and a drain region using a metal mask or the like. Hence, aresist mask is required to be formed by an exposing, developing, anddroplet discharging in forming an island-like semiconductor region. Itresults in the increase in the number of processes and the number ofkinds of materials.

In view of the foregoing, it is an object of the present invention toprovide a method for manufacturing a semiconductor element that has theproper conditions to be actively formed by droplet discharging.According to the present invention, the high throughput manufacture of ahigh stable semiconductor element over various sized substrates can berealized in high yields for reduced tact time can be realized.

The followings are aspects of the present invention to solve theforegoing problems.

One aspect of the present invention provides a method for manufacturinga semiconductor element comprises the steps of forming a gate electrodelayer by discharging a composite containing a first conductive materialover a substrate; forming a gate insulating film over the gate electrodelayer; forming a semiconductor film over the gate insulating film;forming a semiconductor film containing an impurity element of a singleconductivity type over the semiconductor film; forming a source regionand a drain region by discharging a composite containing a secondconducive material over the semiconductor film containing an impurityelement of a single conductivity type; forming an insulating film over aportion serving as a channel region in the semiconductor film; andforming an island-like semiconductor film by removing the semiconductorfilm using the source electrode, the drain electrode, and the insulatingfilm as masks.

That is, a gate electrode layer is formed by droplet discharging over asubstrate; a gate insulating film, a semiconductor film, a semiconductorfilm containing an impurity element of a single conductivity type(hereinafter, single conductivity semiconductor film) are stacked by athin film formation method such as CVD or sputtering; and a sourceelectrode and a drain electrode are formed by droplet discharging. Then,a source region and a drain region are formed by removing the exposedsingle conductivity semiconductor film by etching or the like. And then,an insulating film capable of being formed by droplet discharging or thelike is formed thereover to cover to prevent the portion serving as achannel region of the semiconductor film from removing. In addition, theinsulating film serves as a channel protecting film. An island-likesemiconductor film is formed by removing the exposed semiconductor filmby etching or the like by using the source electrode, the drainelectrode, and the insulating film as masks. Through the foregoingprocess, a semiconductor element that seems like a channel protectivetype apparently can be obtained. Moreover, a desired liquid crystaldisplay device or a light-emitting device can be obtained by providing alight-emitting element using a liquid crystal element, organicelectroluminescent element, or the like, which is formed by connecting apixel electrode to the source electrode or the drain electrode.

Another aspect of the present invention is that at least a portionprovided with a gate electrode layer in a substrate is pretreated beforedischarging a composite containing a first conductive material over thesubstrate. As the pretreatment, the formation of a layer containingtitanium, titanium oxide, or the like; the formation of a film formed bya substance which has a skeleton formed by the bond of silicon (Si) andoxygen (O), and which includes at least hydrogen as a substituent, or atleast one selected from the group consisting of fluoride, alkyl group,and aromatic hydrocarbon as the substituent; plasma treatment; or thelike can be nominated. The plasma treatment is preferably conduced inatmospheric pressure.

More another aspect of the present invention is that a source region anda drain region are formed; a first insulating film is formed over thesource region and the drain region by CVD or sputtering; a secondinsulating film is formed over the first insulating film and over theportion serving as a channel region in the semiconductor film; and aninsulating film serving as a channel protective film is formed to have atwo-layered structure. The second insulating film serves as not only achannel protective film but also as a mask for removing a firstprotective film formed all over a substrate by CVD or the like. As thefirst insulating film, an insulating film containing silicon,preferably, a silicon nitride film is used. As the second insulatingfilm, any insulating film can be used as long as it can be selectivelyformed by droplet discharging. Preferably, a film formed by a substancewhich has a skeleton formed by the bond of silicon (Si) and oxygen (O),and which includes at least hydrogen as a substituent, or at least oneselected from the group consisting of fluoride, alkyl group, andaromatic hydrocarbon as the substituent can used as the secondinsulating film. The insulating film is not limited to a two-layeredstructure; the film can be formed to have a three or morelaminated-layer.

A substance, which has a skeleton formed by the bond of silicon andoxygen, and which includes at least hydrogen as a substituent, or atleast one selected from the group consisting of fluoride, alkyl group,and aromatic hydrocarbon as the substituent is referred to assiloxane-based resin. The siloxane-based resin is a kind of a heatresistant planarization film or a heat resistant interlayer (HRIL) film.Hereinafter, the term “heat resistant planarization film”, “heatresistant interlayer film”, “heat resistant resin”, or “HRIL” includesthe siloxane-based resin.

As droplet discharging for forming the conductive material or theinsulating film, not only ink jetting but also offset printing orscreen-printing can be used depending on the property of a film to beformed.

A semiconductor element according to the present invention comprises alayer containing titanium or a titanium oxide formed over a substrate; agate electrode layer formed over the layer; a gate insulating filmformed over the gate electrode layer; a semiconductor film formed overthe gate insulating film; a pair of n-type impurity regions formed overthe semiconductor film; an insulating film that is interposed betweenthe pair of n-type impurity regions and that is formed over thesemiconductor film; and a conductive layer formed over the pair ofn-type impurity regions.

The insulating film is preferably formed to have a thickness of 100 nmor more to serve as a channel protecting film. Further, the insulatingfilm may be formed to have a laminated-layer structure. For example, abottom layer may be formed by a film that can be formed by CVD orsputtering such as a silicon nitride film, and a top layer may be formedby a film that can be formed by droplet discharging, for example, heatresistant resin such as polyimide, acrylic, or siloxane. Alternatively,both layers may be formed by films that can be formed by dropletdischarging. The semiconductor film provided with the insulating film ispreferably formed to have a thickness of 10 nm or more.

Conventionally, a source region and a drain region were formed byetching off a single conductivity semiconductor film after forming anisland-like semiconductor film. Accordingly, it was necessary to providea resist mask before forming an island-like semiconductor film. On thecontrary, according to the present invention, after that a source regionand a drain region are formed, an insulating film serving as a channelprotective film is formed to cover a portion for serving as a channelregion, then, an island-like semiconductor film is formed. Accordingly,a resist mask is not required to be formed, and so a process can besimplified. As discussed above, the present invention provides a novelmeans for forming a semiconductor element by combining a method forremoving a single conductivity semiconductor film using a metal mask ofa source electrode and a drain electrode to form a source region and adrain region, and a method, which is specific to a channel protectivetype, for forming a channel protective film to prevent a channel regionfrom removing. According to the foregoing embodiment of presentinvention, a semiconductor element can be manufactured by using only ametal mask of a source electrode and a drain electrode without using anyresist mask.

Before discharging a composite containing a first conductive materialover a substrate, a pretreatment such as the formation of a titaniumoxide (TiOx) or the like may be conducted over the substrate at leastover the portion provided with a gate electrode layer. Accordingly, theadhesiveness between the substrate and a conductive film such as thegate electrode layer formed by droplet discharging can be improved.

By forming a semiconductor film provided with the insulating film tohave a thinner thickness than that of the other semiconductor film, ann-type impurity region can be divided into a source region and a drainregion completely. By forming the semiconductor film provided with theinsulating film to have a thickness of 10 nm or more, enough largechannel mobility can be obtained.

By forming the insulating film to have a thickness of 100 nm or more,the function as a channel protective film can be improved and thechannel region can be surely prevented from damaging. Accordingly, astable semiconductor element having high mobility can be provided.Further, to obtain the foregoing advantage, it is effective that theinsulating film is formed to have a two-layer structure composed of afirst insulating film and a second insulating film, or three or morelaminated-layer structure.

DISCLOSURE OF INVENTION

A semiconductor element and a method for manufacturing the semiconductorelement are explained with reference to FIGS. 1A to 1D.

A so-called photocatalytic substance such as titanium, or a titaniumoxide; or heat resistant resin such as polyimide, acrylic, or siloxaneis formed over a substrate 100 at least over a portion provided with agate electrode layer. Here, a titanium oxide film 132 is formed.Alternatively, plasma treatment can be carried out. Such pretreatmentresults to improve the adhesiveness between the substrate 100 and aconductive film formed by discharging a composite containing aconductive material. In case of forming a titanium oxide,light-transmittance can be improved. The titanium oxide may be directlyformed, or can be formed by baking a conductive film after forming atitanium film. Besides the titanium or the titanium oxide, aphotocatalytic substance such as strontium titanate (SrTiO₃), cadmiumselenide (CdSe), potassium tantalate (KTaO₃), cadmium sulfide (CdS),zirconium oxide (ZrO₂), niobium oxide (Nb₂O₅), zinc oxide (ZnO), ironoxide (Fe₂O₃), or tungsten oxide (WO₃) can be formed. The foregoingpretreatment is carried out as much as possible to improve theadhesiveness between the substrate and the conductive film.

In case of carrying out the pretreatment with the surface of thesubstrate 100, a gate electrode layer 102 is formed by discharging acomposite containing a first conductive material over the pre-treatedportion. Here, the gate electrode layer refers to a layer formed by asingle layered or multiple layered conductor including at least a gateelectrode portion of a TFT. The gate electrode layer is formed bydischarging the composite; and drying the composite at 100° C.; then,baking the composite under nitride or oxide atmosphere at 200 to 350° C.for 15 to 30 minutes. However, it is not limited to the foregoingcondition.

As the first conductive material, various materials depending on thefunction of the conductive film can be used. As typical examples aresilver (Ag), copper (Cu), gold (Au), nickel (Ni), platinum (Pt), chrome(Cr), tin (Sn), palladium (Pd), iridium (Ir), rhodium (Rh), ruthenium(Ru), rhenium (Re), tungsten (W), aluminum (Al), tantalum (Ta), indium(In), tellurium (Te), molybdenum (Mo), cadmium (Cd), zinc (Zn), iron(Fe), titanium (Ti), silicon (Si), germanium (Ge), zirconium (Zr),barium (Ba), hard lead, tin oxide antimony, fluoride doped zinc oxide,carbon, graphite, glassy carbon, lithium, beryllium, sodium, magnesium,potassium, calcium, scandium, manganese, zirconium, gallium, niobium,sodium-potassium alloys, magnesium-copper mixtures, magnesium-silvermixtures, magnesium-aluminum mixtures, magnesium-indium mixtures,aluminum-aluminum oxide mixtures, lithium-aluminum mixtures, or thelike, or particles or the like such as silver halide, or dispersiblenanoparticles; or indium tin oxide (ITO) used as a conductive film, zincoxide (ZnO), gallium zinc oxide (GZO) composed of zinc oxide doped withgallium, indium tin oxide (IZO) composed of indium oxide mixed with 2 to20% of zinc oxide, organic indium, organic tin, titanium nitride, or thelike can be used.

Silicon (Si) or silicon oxide (SiOx) may be contained in the foregoingconductive material, especially in case that the foregoing material isused for forming a transparent conductive film. For example, aconductive material composed of ITO containing silicon oxides(hereinafter, ITSO) can be used. Further, a desired conductive film maybe formed by stacking layers formed by these conductive materials.

The diameter of a nozzle used for a droplet discharging means is setfrom 0.1 to 50 μm (preferably, 0.6 to 26 μm), and the discharge quantityis set from 0.00001 to 50 pl (preferably, 0.0001 to 10 pl). Thedischarge quantity is increased with the increase in the diameter of anozzle. A subject and a discharge opening of a nozzle is preferablyclose to each other as much as possible to deliver drops to a desiredportion. The distance between the subject and the discharge opening ispreferably set approximately from 0.1 to 2 mm.

In consideration with the specific resistance value, the compositedischarged from a discharge opening is preferably formed by dissolvingor dispersing a material of gold, silver, or copper in a solvent. Morepreferably, low resistant silver or copper may be used. In case of usingcopper, a barrier film is preferably provided together as acountermeasure against impurities. As the solvent, esters such as butylacetate or ethyl acetate; alcohols such as isopropyl alcohol or ethylalcohol; an organic solvent such as methyl ethyl ketone or acetone; orthe like can be used. As the barrier film in case of using copper as awiring, a substance including nitrogen with an insulating property or aconducting property such as silicon nitride, silicon oxynitride,aluminum nitride, titanium nitride, or tantalum nitride (TaN) can beused to form the barrier film by droplet discharging.

A composite used for droplet discharging has preferably viscosity of 300mPa·s or less to prevent desiccation and to be discharged smoothly froma discharge opening. The viscosity, the surface tension, or the like ofa composite may be controlled depending on a solvent or application. Asan example, a composite formed by dissolving or dispersing ITO, ITSO,organic indium, and organic tin in a solvent has viscosity of from 5 to50 mPa·s, a composite formed by dissolving or dispersing silver in asolvent has viscosity of from 5 to 20 mPa·s, and a composite formed bydissolving or dispersing gold in a solvent has viscosity of from 10 to20 mPa·s.

The diameter of a particle of a conductive material is preferably smallas much as possible, preferably 0.1 μm or less to prevent clogging andto manufacture a high-definition pattern despite the fact that itdepends on the diameter of each nozzle, a pattern form, or the like. Acomposite is formed by a known method such as an electrolytic method, anatomization method, or a wet-reduction method to have a grain diameterof from approximately 0.5 to 10 μm. In case that the composite is formedby a gas evaporation method, a nano molecule protected by a dispersingagent has a minute diameter of approximately 7 nm. Further, the nanoparticle whose surface is covered by a film-forming agent can be stablydispersed in a solvent without aggregation at room temperature, whichshows just like the behavior of liquid. Therefore, a film-forming agentis preferably used.

Alternatively, a gate electrode layer may be formed by discharging acomposite containing a particle in which a material of a singleconductivity type covered by another conductive material. In thisinstance, a buffer layer is preferably provided between both of theconductive materials. The particle formed by covering Cu by Ag may havethe structure in which a buffer layer of Ni or NiB is provided betweenthe Cu and Ag.

By using actively a gas mixed with oxygen of 10 to 30% in a divisionratio in a process for baking a composite containing a conductivematerial, the resistivity of a conductive film for forming the gateelectrode layer can be reduced, and the conductive film can be formedinto a thin and smooth film. An outline of the state of changes in aconductive film through a process of baking is given with reference toFIGS. 8A to 8C. FIG. 8A shows the state that nano paste 502 containing aconductive material such as Ag is discharged over a glass substrate 500by a nozzle 501. The nano paste is formed by dispersing or dissolving aconductive material into an organic solvent. Besides, a dispersing agentor thermosetting resin referred to as binder is also contained in theorganic solvent. Especially, the binder can prevent the nano paste frombeing cracked and being unevenly baked. By the drying and the bakingprocesses, the organic solvent is evaporated, and a dispersing agent isdecomposed to be removed, then, the nano paste is cured and contracteddue to the binder, simultaneously. Accordingly, nano particles are fusedwith each other to cure the nano paste. Simultaneously, the nanoparticles are grown to a size of from several ten to hundred several tennm, and the adjoining growing nano particles are welded and linkedtogether to form metal chains. On the other hand, almost the leftorganic ingredients (approximately 80 to 90%) are pushed out to theoutside of the metal chains. As a result, a conductive film containingmetal chains 503 and a film formed by the organic ingredients 504covering the surface are formed (FIG. 8B). In baking the nano paste 502in the presence of nitrogen and oxygen, the film formed by organicingredients 504 can be removed by the reaction of the oxygen in the gasand carbon or hydrogen contained in the film formed by organicingredients 504. In case that oxygen is not contained in the bakingatmosphere, the film formed by organic ingredients 504 can be removed byoxygen plasma treatment or the like (FIG. 8C). As discussed above, thefilm formed by organic ingredients 504 is removed in accordance with theprocedure, that is, the nano paste is baked or dried in the presence ofnitrogen and oxygen, and oxygen plasma treatment is carried out.Therefore, the conductive film containing metal chains 503 can be formedinto a thin and smooth film, and reduced its resistivity.

Further, a solvent in a composite volatilizes by discharging thecomposite containing a conductive material under reduced pressure, andso the time for the subsequent heat treatment (drying or baking) can bereduced.

In addition to the drying and baking process, treatment for flatteningand smoothing the surface can be carried out. As the treatment, CMP(chemical mechanical polishing); or a method for flattening theconductive film by etching after forming an insulating film having aplanarization property over the conductive film.

As the substrate, a substrate formed by an insulator such as a glasssubstrate, a quartz substrate, or alumina; a plastic substrate havingheat resistance capable of resisting process temperature in thesubsequent treatment; or the like can be used. In this instance, a baseinsulating film for preventing impurities from diffusing from asubstrate such as a silicon oxide (SiOx), a silicon nitride (SiNx), asilicon oxynitride (SiOxNy) (x>y), silicon nitride oxide (SiNxOy) (x>y),or the like, (x, y=1, 2 . . . ) may be formed. Alternatively, a metalsuch as stainless, or a semiconductor substrate provided with aninsulating film such as silicon oxide or silicon nitride can be used.

A gate insulating film 103 is formed over the gate electrode layer. Thegate insulating layer is formed by a film containing a silicon nitride,a silicon oxide, a silicon nitride oxide, or a silicon oxynitride in asingle layer or a laminated-layer by a thin film forming method such asplasma CVD, sputtering, or the like. Here, a silicon oxide film, asilicon nitride film, and a silicon oxide film are formed sequentiallyover a substrate. However, it is not limited to the structure, thematerial, and the method.

A semiconductor film 104 is formed over the gate insulating film 103.The semiconductor film is formed by an amorphous semiconductor, acrystalline semiconductor, or a semiamorphous semiconductor. As thesesemiconductors, a semiconductor film containing silicon, silicongermanium (SiGe), or the like as its main component can be used. Thesemiconductor film can be formed by plasma CVD to have preferably athickness of from 10 to 100 nm.

Among the foregoing semiamorphous semiconductors, a SAS (Semi-AmorphousSilicon) is briefly explained. The SAS can be obtained by grow dischargedecomposition of a silicide gas. As a typical silicide gas, SiH₄ can beused. Other silicide gas such as Si₂H₆, SiH₂Cl₂, SiHCl₃, SiCl₄, SiF₄, orthe like can be used. The SAS can be formed easily by diluting thesilicide gas with one kind or a plurality of kinds of a rare gas elementselected from the group consisting of hydrogen, hydrogen and helium,argon, krypton, and neon. The dilution rate is preferably in the rangeof from 10 to 1000 times. Of course, a reaction product for forming afilm is formed by grow discharge decomposition at a reduced pressure inthe range of approximately from 0.1 to 133 Pa. High frequency current offrom 1 MHz to 120 MHz, preferably, from 13 MHz to 60 MHz may be suppliedfor forming grow discharge. A temperature for heating a substrate ispreferably 300° C. or less, more preferably, from 100 to 200° C.

An energy band width may be controlled to be from 1.5 to 2.4 eV, or from0.9 to 1.1 eV by mixing a carbide gas such as CH₄ or C₂H₆, or agermanium gas such as GeH₄ or GeF₄ into the silicide gas.

The SAS shows weak n-type electrical conductivity when impurities aredeliberately not doped to control a valency electron. This arises fromthe fact that oxygen is easily mixed into a semiconductor film sincegrow discharge at higher electricity is carried out than that forforming an amorphous semiconductor. Therefore, it becomes possible thata threshold value can be controlled by doping p-type impurities into thefirst semiconductor film provided with a channel formation region for aTFT simultaneously with or after the formation of the film. Asimpurities imparting p-type, boron can be typically used. An impuritygas of from 1 to 1000 ppm such as B₂H₆ or BF₃ may be mixed into asilicide gas. In case that boron is used as impurities imparting p-type,the boron may have a concentration of from 1×10¹⁴ to 6×10¹⁶ atoms/cm³.By forming a channel formation region by the foregoing SAS, electronfield-effect mobility of from 1 to 10 cm²/V·sec can be obtained.

A crystalline semiconductor film can be obtained in accordance with thefollowing procedure, that is, an amorphous semiconductor film is treatedin a solution containing catalyst such as nickel; heat crystallizationtreatment is carried out at 500 to 750° C. to obtain a crystallinesilicon semiconductor film; and laser crystallization is carried out toimprove the crystallinity.

The crystalline semiconductor film can be obtained by forming directly apoly-crystalline semiconductor film by LPCVD (low pressure CVD) using amaterial gas of disilane (Si₂H₆) and fluoride germanium (GeF₄). TheLPCVD is carried out in the conditions, but not exclusively, that is, agas flow ratio of Si₂H₆/GeF₄=20/0.9, a film forming temperature of from400 to 500° C., and a carrier gas of He or Ar.

An n-type semiconductor film 105 is formed over a semiconductor film104. As an n-type impurity element, arsenic (Ar) and phosphorus (P) canbe used. In case of forming an n-type semiconductor film, an n-type (n+)silicon film can be formed by the grow discharge decomposition of amixed gas of SiH₄, H₂, and PH₃ (phosphine) using plasma CVD. Instead ofthe n-type semiconductor film 105, a semiconductor film containingp-type impurity elements such as boron (B) can be formed.

A source electrode 108 and a drain electrode 109 are formed bydischarging a composite containing a second conductive material over then-type semiconductor film 105. The second conductive material, aconductive particle structure, a discharge condition, a dryingcondition, a baking condition, or the like can be appropriately selectedfrom those explained in the foregoing first conductive material.Further, the first and the second conductive materials and the first andthe second particle structures may be the same or different (FIG. 1A).

Although not shown, pretreatment for improving the adhesiveness betweenthe n-type semiconductor film 105 and the source electrode 108, and theadhesiveness between the n-type semiconductor film 105 and the drainelectrode 109 may be conducted before discharging the compositecontaining the second conductive material over the n-type semiconductorfilm 105. The pretreatment may be conducted similar to the way thepretreatment for forming the gate electrode 102.

A source region 112 and a drain region 113 are formed by plasma etchingthe n-type semiconductor film 105 using the source electrode 108 and thedrain electrode 109 as masks with an etching gas of a chlorine gas suchas Cl₂, BCl₃, SiCl₄, or CCl₄; a fluoride gas such as CF₄, SF₆, NF₃, orCHF₃; or O₂. However, it is not limited to the conditions. The etchingcan be carried out by using atmospheric plasma. In this instance, amixed gas of CF₄ and O₂ is preferably used as an etching gas. In casethat the n-type semiconductor film 105 and the semiconductor film 104are formed by the same semiconductor, attention needs to be paid to anetching rate and an etching time since the semiconductor film 104 isetched together when the n-type semiconductor film 105 is etched.However, enough mobility as a TFT can be obtained even if a part of thesemiconductor film 104 is etched in case that a semiconductor film at achannel forming region is formed to have a thickness of 5 nm or more,preferably, 10 nm or more, more preferably, 50 nm or more.

An insulating film 115 is formed by droplet discharging over the channelregion of the semiconductor film 104. Since the insulating film 115serves as a channel protective film, it is formed by discharging acomposite of heat resistant resin such as siloxane, or a substancehaving etching resistivity and insulating property such as acrylic,benzocyclobutene, polyamide, polyimide, benzimidazole, or polyvinylalcohol. Siloxane and polyimide are preferably used. To prevent thechannel region from being over etched, the insulating film 115 is formedto have a thickness of 100 nm or more, preferably 200 nm or more (FIG.1B). Therefore, as shown in FIG. 1B, the insulating film 115 may beformed into like a mound over the source electrode 108 and the drainelectrode 109.

Then, an island-like semiconductor film 118 is formed by plasma etchingthe semiconductor film 104 using the source electrode 108, the drainelectrode 109, and the insulating film 115 as masks with an etching gasof a chlorine gas such as Cl₂, BCl₃, SiCl₄, or CCl₄; a fluoride gas suchas CF₄, SF₆, NF₃, or CHF₃; or O₂. However, it is not limited to theconditions. The etching can be carried out by using atmospheric plasma.In this instance, a mixed gas of CF₄ and O₂ is preferably used as anetching gas. Further, since the insulating film 115 serving as a channelprotective film is formed over the channel region 119 in the island-likesemiconductor film 118, the channel region 119 is not damaged due tooveretching in the foregoing etching process. Hence, a channelprotective type TFT (channel stopper type) having stable characteristicsand high mobility can be manufactured without any resist mask (FIG. 1C).

A liquid crystal element or a light-emitting element (typically, alight-emitting element utilizing electroluminescence) composed of layerscontaining organic compounds or inorganic compounds is provided byforming a source wiring 123 and a drain wiring 124 by discharging acomposite containing a third conductive material so as to be in contactwith the source electrode 108 and the drain electrode 109, and byconnecting the source wiring 123 and the drain wiring 124 to a pixelelectrode 126. Accordingly, an active matrix liquid crystal displaydevice or a thin display device such as an electroluminescent device,each of which can be controlled by a semiconductor element manufacturedby the foregoing processes, can be manufactured. The third conductivematerial, a conductive particle structure, a discharge condition, adrying condition, a baking condition, or the like can be appropriatelyselected from those explained in the foregoing first conductivematerial. Further, the second and the third conductive materials and thesecond and the third particle structures may be the same or different.The pixel electrode is preferably formed by droplet discharging of ITO,ITSO, ZnO, GZO, IZO, organic indium, organic tin, or the like (FIG. 1D).

Although not shown, pretreatment for improving the adhesiveness with thebottom layer can be carried out in forming the source wiring 123, thedrain wiring 124, and the pixel electrode 126. The pretreatment can beconducted similar to the way of the pretreatment for forming the gateelectrode layer 102.

As noted above, according to the present invention, after the sourceregion 112 and the drain region 113 are formed, the portion serving as achannel region is covered by the insulating film 115 serving as achannel protecting film to form the island semiconductor film.Accordingly, a resist mask is not required, and so the process can besimplified. The present invention provides a novel means for forming asemiconductor element by combining a method for removing a singleconductivity semiconductor film using a metal mask of a source electrodeand a drain electrode to form a source region and a drain region, and amethod, which is specific to a channel protective type, for forming achannel protective film to prevent a channel region from removing. Asemiconductor element can be manufactured by using only a metal mask ofa source electrode and a drain electrode without using any resist maskaccording to the foregoing structure. As a result, the process can besimplified, and the costs can be drastically reduced by the saving ofmaterials. The high throughput manufacture of a high stablesemiconductor element can be realized at low costs with high yields fora reduced tact time especially in case that a substrate of more than 1×1m or a twice or three times as large as that.

In the semiconductor element according to the present invention, theadhesiveness between a substrate and a conductive film such as a gateelectrode layer or the like formed by droplet discharging can beimproved since at least a portion provided with the gate electrode layerin the substrate is treated such as the formation of a titanium oxide orthe like.

By forming a portion of a semiconductor film provided with theinsulating film to have a thinner thickness than that of the othersemiconductor film, an n-type impurity region can be surely divided intoa source region and a drain region. Further, by forming a portion ofsemiconductor film provided with a semiconductor film to have athickness of from 5 nm or more, preferably, 10 nm or more, enough largechannel mobility can be obtained.

In the semiconductor element according to the present invention, theinsulating film 115 serving as a channel protective film is formed overthe channel region 119, accordingly, the channel region 119 is notdamaged due to overetching in etching the semiconductor film 104.Therefore, the semiconductor element has stable characteristics and highmobility. By forming the insulating film to have a thickness of 100 nmor more, the function of the insulating film as a channel protectivefilm can be surely improved to prevent damages of the channel region.Therefore, a high stable semiconductor element having high mobility canbe obtained. To obtain the foregoing advantages, it is effective thatthe insulating film can be formed to have a two-layered structurecomposed of the first insulating film and the second insulating film, ora multi-layered structure composed of three or more layers.

BRIEF DESCRIPTION OF DRAWINGS

In the accompanying drawings:

FIGS. 1A to 1D are schematic views for showing a process of a TFTaccording to the present invention;

FIGS. 2A to 2D are schematic views for showing a process of a TFTaccording to the present invention;

FIGS. 3A to 3C are schematic views for showing a process of a liquidcrystal display panel according to the present invention;

FIGS. 4A and 4B are schematic views for showing a process of a liquidcrystal display panel according to the present invention;

FIGS. 5A to 5C are schematic views for showing a process of a liquidcrystal display panel according to the present invention;

FIGS. 6A to 6C are schematic views for showing a process of anelectroluminescent panel according to the present invention;

FIGS. 7A to 7C are explanatory views for showing a top emissionlight-emitting device, a bottom emission light-emitting device, and adual emission light-emitting device according to the present invention;

FIGS. 8A to 8C are explanatory views for showing a method for forming atitanium oxide film;

FIGS. 9A to 9C are explanatory views for showing one example of anelectric appliance according to the present invention;

FIG. 10 shows a configuration of a droplet discharging system;

FIGS. 11A and 11B are explanatory views for showing wirings formed bydischarging separately even-row and odd-row wirings using a nozzle witha pitch of n-times as a pixel pitch according to Embodiment;

FIGS. 12A to 12D are explanatory views for showing a pixel electrodeformed by discharging with a plurality of nozzles having differentdischarge opening diameters according to Embodiment;

FIGS. 13A to 13C are explanatory views for showing a planarizationwiring formed by discharging with a plurality of nozzles havingdifferent discharge opening diameters according to Embodiment;

FIG. 14 is an explanatory view for showing a wiring having differentline widths formed by discharging with a plurality of nozzles havingdifferent discharge opening diameters according to Embodiment; and

FIGS. 15A to 15C are explanatory views for showing an opening portionfilled with a conductive material by discharging with a plurality ofnozzles having different discharge opening diameters according toEmbodiment.

BEST MODE FOR CARRYING OUT THE INVENTION Example 1

In Example 1, the case that a substrate is pretreated before forming agate electrode layer thereover is explained.

As the first method, a titanium oxide film 132 can be directly formedover a substrate 100 as shown in FIG. 1A. The titanium oxide film 132may be formed all over the substrate by spin coating, dropletdischarging, spraying, sputtering, CVD, or the like. Thereafter, a gateelectrode layer 102 is formed over the titanium oxide film 132 bydroplet discharging. Accordingly, the adhesiveness between the substrate100 and the gate electrode layer 102 can be improved by interposing thetitanium oxide film 132 therebetween. After forming the gate electrodelayer 102, the titanium oxide film 132 at the periphery of the gateelectrode layer 102 may be left or removed by etching. Further, theetching treatment is preferably carried out at atmospheric pressure. Inaddition, a titanium film may be formed instead of forming the titaniumoxide film. Here, the gate electrode layer 102 is formed by stackingAg/Cu over the titanium oxide film. Alternatively, only Cu may bestacked over the titanium oxide film.

As the second method, a titanium oxide film can be selectively formed bydroplet discharging. As the droplet discharging, screen printing oroffset printing can be used in addition to ink jetting. Alternatively,sol-gel can be used. Thereafter, a gate electrode layer is selectivelyformed by droplet discharging over a titanium oxide layer or an innersurface of the titanium oxide layer. In addition, a titanium film may beformed instead of forming the titanium oxide film.

As the third method, a titanium film is formed all over a substrate byspin coating, droplet discharging, sputtering, CVD, or the like; and acomposite containing a conductive material for forming a gate electrodelayer are selectively formed over the titanium film by dropletdischarging (FIG. 8A). Then, the composite is dried and baked.Simultaneously, the titanium film 505 is oxidized. Accordingly, atitanium oxide film 506 is formed at the periphery of the composite. Thetitanium oxide film is superior in light transmittance. For example, atitanium oxide film is effectively utilized in a bottom emissionlight-emitting device to emit light from a substrate as shown in FIGS.6C and 7B. After forming the titanium film all over a substrate by spincoating, droplet discharging, sputtering, CVD, or the like, the titaniumoxide film may be formed by heat treatment before dischargingselectively the composite containing a conductive material for forming agate electrode layer.

In the foregoing first to third methods, instead of forming the titaniumfilm and the titanium oxide film, so-called a photocatalyst substancecan be used such as strontium titanate (SrTiO₃), cadmium selenide(CdSe), potassium tantalate (KTaO₃), cadmium sulfide (CdS), zirconiumoxide (ZrO₂), niobium oxide (Nb₂O₅), zinc oxide (ZnO), iron oxide(Fe₂O₃), tungsten oxide (WO₃), or the like. Alternatively, with respectto oxides, substance before being oxidized (Zr, Nb, Zn, Fe, W, or thelike) can be used.

As the fourth method, the adhesiveness between a substrate and anelectrode layer can be improved by forming heat resistant resin such aspolyimide, acrylic, siloxane, or the like over the substrate. Thesematerials may be formed all over the substrate or over a region wherethe gate electrode layer is formed. In the case of forming the materialsall over the substrate, a film left at the periphery of the gateelectrode layer may be removed by etching or ashing.

As the fifth method, the adhesiveness can be improved by treating inplasma the portion where the substrate and the gate electrode layer areformed. Plasma treatment under atmospheric pressure is preferable, butnot exclusively.

Example 2

In Example 2, the case that an insulating film serving as a channelprotecting film is formed by stacking two layers is explained.

As shown in FIG. 1B, a source region 112 and a drain region 113 areformed by etching an n-type semiconductor film 105 using a sourceelectrode 108 and a drain electrode 109 as masks. Then, a siliconnitride film 133 is formed all over the surface by CVD, sputtering, orthe like (FIG. 2A). An insulating film 115 is formed by dropletdischarging over the region that serves as a channel region of asemiconductor film and over the silicon nitride film 133. Since theinsulating film 115 does not serve as a channel protecting film but amask for removing the silicon nitride film 133, the insulating film 115is formed by discharging a composite of heat resistant resin such assiloxane, or a substance having etching resistivity and insulatingproperty such as acrylic, benzocyclobutene, polyamide, polyimide,benzimidazole, or polyvinyl alcohol. Siloxane and polyimide arepreferably used. To prevent the channel region from being overetched,the silicon nitride film 133 and the insulating film 115 are preferablyformed to have a total thickness of 100 nm or more, more preferably, 200nm or more (FIG. 2B).

The silicon nitride film 133 is etched off by using the insulating film115 as a mask to leave the insulating films 115, 134, each of whichserves as a channel protecting film. The insulating film 134 is,needless to say, formed by a silicon nitride film. The silicon nitridefilm is etched by plasma etching with an etching gas of a chloride gasas typified by Cl₂, BCl₃, SiCl₄, CCl₄, or the like, a fluoride gas astypified by CF₄, SF₆, NF₃, CHF₃, or the like, or O₂. However, theetching gas is not limited thereto. The etching treatment can utilizeatmospheric pressure plasma.

The two-layered channel protecting film can improve a function as achannel protecting film, prevent the channel region from being damaged,and provide a stable semiconductor element with high mobility.Alternatively, the channel protecting film may be formed by stackingthree or more layers. The bottom layer thereof is not limited to asilicon nitride film; an insulating film containing another silicon maybe used. Such channel protecting film may be formed by selectivelystacking a film capable of being formed into a film by dropletdischarging as the insulating film 115.

A semiconductor film 104 is etched by using the source electrode 108, adrain electrode 109, and the insulating films 115, 134 as masks to forman island-like semiconductor film 118. The insulating film 115 servingas a channel protecting film is formed over a channel region 119 in theisland semiconductor film 118. Accordingly, damages due to overetchingin the foregoing etching process can be prevented. Therefore, a channelprotecting (channel stopper) TFT having stable characteristics and highmobility can be manufactured without any resist mask (FIG. 2C).

A source wiring 123 and a drain wiring 124 are formed by discharging acomposite containing the third conductive material to be in contact withthe source electrode 108 and the drain electrode 109 in a mannerexplained in Embodiment. Further, the source wiring 123 or the drainwiring 124 is connected to a pixel electrode. Then, a liquid crystalelement or a light-emitting element is formed by a layer containing anorganic compound or an inorganic compound (typically, a light-emittingelement utilizing electroluminescence). Hence, a thin display such as anactive matrix liquid crystal display device or an active matrixelectroluminescent display device, each of which can be controlled by asemiconductor element manufactured by the foregoing process can beobtained (FIG. 2D).

Example 3

In Example 3, a method for forming a conductive film by combiningdroplet discharging with plating is explained.

Firstly, a composite containing Ag are formed by droplet discharging. Inthis instance, in case that a thick wiring is formed in a comparativenarrow line width of several to ten several μm, the Ag is required to bedischarged over and over. Alternatively, the line width can be increasedby soaking a substrate provided with Ag in a plating solution containingCu, or directly discharging the plating solution over the substrate. Acomposite formed by droplet discharging have especially manyirregularities, accordingly, the plating can be easily carried out. Inaddition, Cu plating results the reduction of costs since Ag isexpensive. A conductive material for forming a wiring by a methodaccording to this example is not limited to the foregoing kinds.

After the Cu plating, the surface of the conductive film havingirregularities is planarized by forming a buffer layer such as NiB orthe like. Then, a gate insulating film is preferably formed.

Example 4

In Example 4, a method for manufacturing an active matrix LCD panelaccording to the present invention is explained with reference to FIGS.3A to 5C.

As the first method, a planarization film 151 is selectively formed bydroplet discharging over a TFT manufactured according to the presentinvention, and a source wiring and a drain wiring 152, each of which isconnected to a source electrode and a drain electrode, are formed bydroplet discharging over a region where the planarization film 151 isnot formed as shown in FIG. 3A. Further, a source wiring or a drainwiring connected to a pixel TFT 654 can serve as a pixel electrode asshown in FIG. 3A. Of course, a pixel electrode can be separately formedto connect to the source wiring or the drain wiring. The sourceelectrode, the drain electrode, the source wiring, and the drain wiringcan be formed by the same conductive material, or different conductivematerial.

The method does not use the concept that a contact hole is formed in aplanarization film. However, it seems that a contact hole is formed inappearance. Hence, the method is referred to as loose contact. As theplanarization film, an organic resin such as acrylic, polyimide orpolyamide, or an insulating film having a Si—O bond and a Si—CH_(x)valence, which is formed by a siloxane-based material as a startingmaterial, is preferably formed.

Thereafter, a liquid crystal layer 154 is interposed between a TFTsubstrate and an opposing substrate. These substrates are pastedtogether by sealant 159. A column spacer 158 is formed over the TFTsubstrate. The column spacer 158 may be formed along with a concaveportion of a contact portion formed over the pixel electrode. The columnspacer 158 is preferably formed to have a height of 3 to 10 μm despitethe fact that it depends on a liquid crystal material. The contactportion has a concave portion corresponding to a contact hole. Thedistortion of liquid crystal orientation can be prevented by forming thespacer along with the concave portion.

An orientation film 153 is formed over the TFT substrate. Then, rubbingtreatment is carried out. And then, a transparent conductive film 156and an orientation film 157 are formed over an opposing substrate 155.Thereafter, the TFT substrate and the opposing substrate are pastedtogether by sealant to be injected with liquid crystal therebetween. Asa result, a liquid crystal layer 154 is formed. Therefore, an activematrix liquid crystal display device can be completed. Further, theliquid crystal layer 154 may be formed by delivering liquid crystal bydrops. Especially, it is an effective method in the case ofmanufacturing a liquid crystal display device by using a large activematrix substrate of more than 1 m.

Further, the orientation films 153, 157, and the column spacer 158 maybe selectively formed by droplet discharging. Especially, it is aneffective method in the case of manufacturing a liquid crystal displaydevice by using a large active matrix substrate of more than 1 m.

A terminal portion 652 is explained hereinafter. As shown in FIG. 1 orthe like, a gate insulating film is left in a region except a TFTelement. Therefore, a contact hole for connecting a wiring 171 formedsimultaneously with the gate electrode layer to an FPC 628 (FlexiblePrinted Circuit) is required. Here, the periphery of the region where acontact hole is to be formed is covered by a conductor 172 formed bydroplet discharging, and a contact hole is formed by using the conductoras a mask. A conductor 173 that is same as the conductor 172 ordifferent from the conductor 172 is discharged by droplet discharging tofill the contact hole. Accordingly, the conductors 172 and 173 can beformed over the gate insulating film. The wiring 171 can be connected tothe FPC 628 by pasting the conductors 172, 173, and the FPC 628 to aterminal electrode 626 by an anisotropic conductive film 627 inaccordance with a known method. The terminal electrode 626 is preferablyformed by a transparent conductive film.

The contact hole in the FPC portion can be opened in manufacturing aTFT. Alternatively, the contact hole can be opened by forming theconductor 172 or 173 simultaneously with forming the source wiring andthe drain wiring. The droplet discharging has an advantage that acomposite can be selectively discharged at the desired spot. One processof the droplet discharging preferably serves as a plurality of theconventional processes.

Through the foregoing processes, an active matrix LCD panel using a TFTmanufactured according to the present invention is completelymanufactured. The TFT can be formed by the method explained inEmbodiments or Examples. Here, one transistor is provided to one pixel.However, two or more transistors can be provided to one pixel. Thepolarity of the TFT may be either an n-type or a p-type. The TFT may beformed to have a CMOS structure composed of an n-type TFT and a p-typeTFT. It is similar in the case of a drive circuit TFT 653. In case offorming a CMOS structure, wirings for connecting each TFT can be formedby droplet discharging of a composite containing a conductive materialin an opening portion after selectively forming the foregoingplanarization film.

As the second method, as shown in FIG. 3B, a column-like conductor 160(also referred to as a pillar, plug, or the like) is formed by dropletdischarging over a source electrode and a drain electrode of a TFTmanufactured according to the present invention. As a conductivematerial for forming the pillar, a similar material for forming theforegoing gate electrode layer or the like can be used. A planarizationfilm 150 is formed over the column-like conductor 160 by dropletdischarging or the like. As the planarization film, an organic resinsuch as acrylic, polyimide or polyamide, or an insulating film having aSi—O bond and a Si—CH_(x) valence, which is formed by a siloxane-basedmaterial as a starting material, is preferably formed by selectivelydroplet discharging.

In the case that a planarization film is formed over the pillar, thesurface of the planarization film and the pillar is etched to obtain apillar having a planarized surface as shown FIG. 3C. A source wiring anda drain wiring 152 for connecting to a source electrode and a drainelectrode is formed over the planarization film by droplet discharging.The source wiring and the drain wiring 152 connected to the pixel TFT654 can serve as a pixel electrode as shown in FIG. 3C. Needless to say,the pixel electrode can be formed separately to connect to the sourcewiring or the drain wiring. Further, the source electrode, the drainelectrode, the pillar, the source wiring, and the drain wiring areformed by the same conductive materials or different conductivematerials.

Thereafter, a process for forming a liquid crystal element is the sameas the first method. The contact hole in the FPC portion can be openedin manufacturing a TFT. Alternatively, the contact hole can be opened byforming the conductor 172 or 173 simultaneously with forming the pillar,the source wiring, and the drain wiring.

As the third method, as shown in FIG. 4A, a column-like insulator havingliquid-shedding quality with respect to the material of a planarizationfilm 151 (hereinafter, pillar insulator 161) is formed over the sourceelectrode and the drain electrode manufactured according to the presentinvention by droplet discharging; and the planarization film 151 isformed at the periphery of the pillar insulator 161. As a material forthe pillar insulator, water-soluble organic resin such as PVA (polyvinylalcohol) that is treated in CF₄ plasma to have liquid-shedding qualitycan be used. As the planarization film, an organic resin such asacrylic, polyimide or polyamide, or an insulating film having a Si—Obond and a Si—CH_(x) valence, which is formed by a siloxane-basedmaterial as a starting material, is preferably formed by selectivelydroplet discharging. After forming the planarization film 151 at theperiphery of the pillar insulator 161, the pillar insulator 161 can beeasily removed by water washing, etching, or the like. In case ofremoving by etching, an anisotropic etching is preferably carried out toprevent a contact hole from being a reverse-taper form. Further, sincethe pillar insulator such as PVA has an insulating property, there willarise no problem even if a part of the pillar insulator is left at thesidewall of the contact hole.

Thereafter, a source wiring and a drain wiring 152 connected to a sourceelectrode and a drain electrode via a contact hole are formed by dropletdischarging over the planarization film. The source wiring or the drainwiring 152 connected to the pixel TFT 654 can serve as a pixel electrodeas shown in FIG. 4B. Needless to say, the pixel electrode can be formedseparately to connect to the source wiring or the drain wiring. Further,the source electrode, the drain electrode, the pillar, the sourcewiring, and the drain wiring are formed by the same conductive materialsor different conductive materials. In case that a contact hole is formedto have a reverse-taper form due to a removing process of the foregoingpillar insulator, a composite containing a conductive material may bestacked by droplet discharging to fill the contact hole in forming thesource wiring and the drain wiring.

A process for forming a liquid crystal is the same as the first method.The opening of the contact hole in the FPC portion can be carried out inmanufacturing a TFT. Alternatively, the contact hole can be opened byforming the conductor 172 or 173 simultaneously with forming the sourcewiring and the drain wiring.

As the fourth method, as shown in FIG. 5A, a liquid-shedding material162 with respect to a material of a planarization film 151 is formedover a source electrode and a drain electrode of a TFT manufacturedaccording to the present invention by droplet discharging, spin coating,spraying, or the like; a mask 163 is formed by PVA, polyimide, or thelike is formed to the region where a contact hole is to be formed; theliquid-shedding material 162 is removed by using PVA or the like; and aplanarization film 151 is formed at the periphery of the leftliquid-shedding material 162. As a material for forming theliquid-shedding material 162, a fluorine silane coupling agent such asFAS (fluoroalkylsilane) or the like can be used. The mask 163 such asPVA, polyimide, or the like may be selectively formed by dropletdischarging. The liquid-shedding material 162 can be removed by O₂aching or atmospheric pressure plasma. Further, the mask 163 formed byPVA can be easily removed by water washing, or the mask 163 formed bypolyimide can be easily removed by a stripper N300.

In the state that the liquid-shedding material 162 is left at the regionwhere a contact hole is to be formed (FIG. 5B), the planarization film151 is formed by droplet discharging, spin coating, or the like. Sincethe liquid-shedding material 162 is left at the region where a contacthole is to be formed, the planarization film is not formed thereover.Further, the contact hole is not likely to be formed in a reverse-tapershape. As the planarization film, an organic resin such as acrylic,polyimide or polyamide, or an insulating film having a Si—O bond and aSi—CH_(x) valence, which is formed by a siloxane-based material as astarting material, is preferably formed by selectively dropletdischarging. After forming the planarization film 151, theliquid-shedding material 162 is removed by O₂ ashing or atmosphericpressure.

Thereafter, a source wiring and a drain wiring 152 connected to a sourceelectrode and a drain electrode via a contact hole are formed by dropletdischarging over the planarization film. The source wiring or the drainwiring 152 connected to the pixel TFT 654 can serve as a pixel electrodeas shown in FIG. 5C. Needless to say, the pixel electrode can be formedseparately to connect to the source wiring or the drain wiring. Further,the source electrode, the drain electrode, the source wiring, and drainwiring are formed by the same conductive materials or differentconductive materials.

A process for forming a liquid crystal is the same as the first method.The opening of the contact hole in the FPC portion can be carried out inmanufacturing a TFT. Alternatively, the contact hole can be opened byforming the conductor 172 or 173 simultaneously with forming the sourcewiring or drain wiring.

In the foregoing first to fourth methods, not shown in FIGS. 3A to 5C,the adhesiveness between the substrate and the gate electrode layer maybe improved by interposing a TiOx film or the like therebetween bypretreatment. The pretreatment can be carried out in case of forming thesource wiring, the drain wiring, the pillar, the pixel electrode, theconductor 172, the conductor 173, or the like. As the pretreatment, thetreatment explained in Embodiments and Examples can be used.

In addition, a passivation film for preventing impurities fromdispersing over the TFT is preferably formed over the source electrodeand the drain electrode (not shown). The passivation film can be formedby silicon nitride, silicon oxide, silicon nitride oxide, siliconoxynitride, aluminum oxynitride; or the other insulating materials suchas aluminum oxide, diamond like carbon (DLC), or carbon containingnitrogen (CN) by a thin film formation method such as plasma CVD, orsputtering. The material may be the same as that used for forming thechannel protecting film. Alternatively, these materials can be stacked.Further, the passivation film can be formed by a composite containingparticles that are insulating materials by droplet discharging.

A pixel electrode may be indirectly formed over a substrate withoutproviding the planarization film, and an orientation film may be formedthereover (not shown). In this instance, a TFT is preferably covered bya cap insulating film or a passivation film.

Example 5

In Example 5, a method for manufacturing an active matrixelectroluminescent panel according to the present invention is explainedwith reference to FIGS. 6A to 6C.

Firstly, as shown in FIG. 6A, a TFT is manufactured according to theforegoing methods explained in Examples and Embodiments. Then, aninsulator 140 for improving step coverage (also referred to as edgecover) is formed at least the side of an island-like semiconductor film.A source wiring 123 and a drain wiring 124 are formed to be in contactwith a source electrode 108 and a drain electrode 109 of the TFT,respectively. The source electrode and the drain electrode is connectedto a pixel electrode 126 (in general, a hole injecting electrode(anode)). In this instance, the wirings can be formed smoothly with goodcoverage since the edge cover is provided below the wirings.Accordingly, breaking can be prevented (FIG. 6B).

Further, the pixel electrode 126 may be formed to have a laminationstructure. For example, the lamination structure of ITSO is adopted inwhich silicon oxide concentration of the TFT side ITSO is preferably setlow concentration (1 to 6 atomic %), and silicon oxide concentration ofthe light-emitting element side ITSO is preferably set highconcentration (7 to 15 atomic %). The surface of the pixel electrode 126may be smoothed by CMP or by polishing by a poly vinyl alcohol porousbody. After polishing by CMP, the surface of the pixel electrode 126 maybe irradiated with ultraviolet rays or treated in oxygen plasma.

After forming the pixel electrode 126 by etching, indium, tin, an indiumoxide, or a tin oxide is released from the inside of a conductive layercomposing the pixel electrode 126 by resist peeling process, hydrocleaning (water washing) process, ultraviolet irradiation process, orthe like. Accordingly, silicon, a silicon oxide, a silicon nitride, orthe like is precipitated within a layer at the surface or the vicinityof the surface of the conductive layer to form a barrier layer formed bythe precipitated materials as main components. The barrier layer may beintentionally formed by silicon, a silicon oxide, a silicon nitride, orthe like by vapor deposition, sputtering, or the like. The barrier layercan increase the work function of the hole injecting electrode andimprove the hole injecting property.

The TFT, the wirings, and a top portion of the pixel electrodes arecovered by a bank selectively formed by droplet discharging. As the bank141, an insulating film having a Si—O bond and a Si—CH_(x) valence,which is formed by organic resin such as acrylic, polyimide, orpolyamide; or a siloxane-based material as a starting material ispreferably used.

Then, a layer containing an organic compound (also referred to aselectroluminescent layer, hereinafter, “organic compound layer 142”) isformed so as to be in contact with the pixel electrode 126 at an openingof the bank 141. The organic compound layer 142 may be formed by asingle layer or a laminated-layer. For example, the organic compoundlayer 142 may have the configuration: 1) anode\hole injecting layer\holetransporting layer\light-emitting layer\electron transportinglayer\cathode; 2) anode\hole injecting layer\light-emittinglayer\electron transporting layer\cathode; 3) anode\hole injectinglayer\hole transporting layer\light-emitting layer\electron transportinglayer\electron injecting layer\cathode; 4) anode\hole injectinglayer\hole transporting layer\light-emitting layer\hole blockinglayer\electron transporting layer\cathode; 5) anode\hole injectinglayer\hole transporting layer\light-emitting layer\hole blockinglayer\electron transporting layer\electron injecting layer\cathode, orthe like.

An electron injecting electrode 143 (cathode) is formed to cover theorganic compound layer 142. The electron injecting electrode 143 can beformed by a known material having a small work function such as Ca, Al,CaF, MgAg, or AlLi. A light-emitting element 146 is formed byoverlapping the pixel electrode 126, the organic compound layer 142, andthe electron injecting electrode 143 at the opening portion of the bank141. A passivation film 144 is formed over the electron injectingelectrode 143 (FIG. 6C).

The foregoing light-emitting element is composed of laminatedlight-emitting layers containing an organic compound or an inorganiccompound, each of which has a different carrier transporting property,interposed between a pair of electrodes. Holes are injected from theelectrode and electrons are injected from another electrode. Thelight-emitting element utilizes the phenomenon that holes injected fromthe electrode and electrons injected from another electrode arerecombined with each other to excite an emission center, and excitedmolecules radiate energy as light while returning to the ground state.The size of a work function of a material for forming an electrodeminimum energy required to extract an electron from the surface of ametal or a semiconductor to the outside of the surface) is an indicatorof hole injection and electron injection properties of thelight-emitting layer. The electrode for injecting holes has preferably alarge work function, and the electrode for injecting electrons haspreferably a small work function.

A wavelength plate, a polarization plate, and an antireflection film arepreferably formed over an opposing substrate 145. As the wavelengthplate, λ/4 and λ/2 are sequentially formed to set a slow axis.

Completing the state shown in FIG. 6C, the light-emitting element ispreferably packaged so as not to be exposed to the air by an airtightprotecting film that is hardly degassed (laminate film, ultravioletcurable resin film, or the like) or cover material.

Example 6

In Example 5, a bottom emission light-emitting device shown in FIG. 6Cthat is manufactured according to the present invention is explained. InExample 6, a top emission light-emitting device shown in FIG. 7A and adual emission light-emitting device shown in FIG. 7C, each of which ismanufactured according to the present invention, are explained.

A dual emission light-emitting device is firstly explained. As amaterial for a hole injecting electrode, a transparent conductive filmsuch as ITO, ITSO, ZnO, IZO, or GZO can be used as in the case withExample 5. In case of using the ITSO as the pixel electrode 126, aplurality of layers of ITSO containing silicon oxides with differentconcentrations can be stacked. Preferably, a bottom ITSO layer (at theside of a source wiring or a drain wiring) has preferably a lowconcentration silicon oxide, and a top ITSO layer (at the side of alight-emitting layer) has preferably a high concentration silicon oxide.Accordingly, the connection between the pixel electrode 126 and a TFTcan be kept in low resistance, and the hole injection efficiency to anelectroluminescent layer can be improved. Of course, the pixel electrodecan be formed by stacking the other material and the ITSO (for example,an ITO layer and an ITSO layer are sequentially stacked). Alternatively,a lamination layer composed of the further other materials may beformed.

As an electron injecting electrode 143, a thin aluminum film with athickness of 1 to 10 nm, an aluminum film containing traces of Li or thelike is used to pass light generated in a light-emitting layertherethrough. Therefore, a dual emission light-emitting device that canemit light generated in a light-emitting element from both of top andbottom surfaces can be obtained (FIG. 7C).

In FIGS. 7A to 7C, reference numeral 141 denotes a bank; 142, an organiccompound layer; 144, a passivation film; 145, an opposing substrate; and146, a light-emitting element.

Next, a top emission light-emitting device is explained with referenceto FIG. 7A. In general, a top emission light-emitting device can beobtained in which light can be emitted from the side that is opposite toa substrate (top direction) according to the procedure: the pixelelectrode 126 serving as a hole injecting electrode and an electroninjecting electrode 143 of a bottom emission type as shown in FIG. 7Bare counterchanged, and layers containing organic compounds areinversely stacked to reverse the polarity of a TFT (n-type TFT is used).In case that an electrode and layers containing organic compounds areinversely stacked as shown in FIG. 7A, a high stable light-emittingdevice can be obtained with improved emission efficiency and with lowpower consumption by forming the pixel electrode 126 to have alamination structure composed of light-transmitting oxide conductivelayers containing different concentrations of silicon oxides. As theelectron injecting electrode 143, a metal electrode havinglight-reflectivity or the like can be used.

Example 7

As an example of an electric appliance using a liquid display panelexplained in Example 4 or an electroluminescent panel explained inExamples 5, 6, a TV reception set, a portable book (electronic book),and a cellular phone shown in FIGS. 9A to 9C can be completed.

FIG. 9A shows a TV reception set in which a display module 2002utilizing liquid crystals or electroluminescent elements is built in ahousing 2001; and a receiver 2005 receives general TV broadcasting, andexchanges information one-directionally (a sender to receiver) andbi-directionally (between a sender and a receiver, or between receivers)by connecting to a wireless or a wired communication network via a modem2004. The TV reception set can be operated by switches built in thehousing or a wireless remote control 2006. The remote control 2006 canbe provided with a display portion 2007 to display information.

A sub-screen 2008 manufactured by a second display module for displayingchannels or volumes thereon can be provided to the TV reception set inaddition to a main-screen 2003. The main-screen 2003 may be manufacturedby an electroluminescent display module having a good viewing angle. Thesub-screen may be manufactured by a liquid crystal display module thatcan display images at low power consumption. To place priority onreducing the power consumption, the main-screen 2003 may be manufacturedby a liquid crystal display module, and the sub-screen may bemanufactured by an electroluminescent display module that enable thesub-screen to flash.

FIG. 9B shows a portable book (electronic book) composed of a main body3101, display portions 3102, 3103, a memory medium 3104, operationswitches 3105, an antenna 3106, and the like.

FIG. 9C shows a cellular phone. Reference numeral 3001 denotes a displaypanel, and 3002 denotes an operation panel. The display panel 3001 andthe operation panel 3002 are connected with each other via a connectingportion 3003. The angle θ can be arbitrarily changed at the connectingportion 3003 between a face provided with a display portion 3004 on thedisplay panel 3001 and a face provided with operation keys 3006 on theoperation panel 3002. The cellular phone also comprises a voice outputportion 3005, operation keys 3006, a power source switch 3007, a voiceinput portion 3008, and an antenna 3009.

Example 8

A semiconductor element according to the present invention is preferablyformed by a droplet discharging system shown in FIG. 10. Firstly, acircuit design is conducted such as a CAD, a CAM, a CAE, or the like,and a desired layout of a thin film and an alignment marker isdetermined by a circuit design tool 800.

Data 801 of a thin film pattern including a designed layout of a thinfilm and an alignment marker is inputted into a computer 802 forcontrolling a droplet discharging device via an information network suchas a memory medium or a LAN (Local Area Network). Based on the data 801of a thin film pattern, a nozzle having a discharge opening with anoptimum diameter, which stores a composite including a material forforming the thin film, or which is connected to a tank for storing thecomposite, is selected among other nozzles (devices for spraying liquidsor gasses from a fine-ended opening) of a droplet discharging means 803;then, a scanning path (moving path) of the droplet discharging means 803is determined. In case that an optimum nozzle has been determined inadvance, only a moving path of the nozzle may be determined.

An alignment marker 817 is formed by photolithography technique or laserlight over a substrate 804 to be provided with the thin film. Thesubstrate provided with an alignment marker is put on a stage 816 in thedroplet discharging device, and the position of the alignment marker isdetected by a imaging means 805 installed in the device, then, it isinputted as position information 807 into a computer 802 via an imageprocessing device 806. The computer 802 verifies the data 801 of thethin film pattern designed by a CAD or the like and the positioninformation 807 obtained by the imaging means 805 to conduct alignmentof the substrate 804 and the droplet discharging means 803.

Thereafter, the droplet discharging means 803 controlled by a controller808 discharges a composite 818 according to the determined scanningpath, and a desired thin film pattern 809 is formed. The dischargequantity can be appropriately controlled by selecting the diameter of adischarge opening. However, the discharge quantity is slightly varied byseveral conditions such as the moving speed of the discharge opening,the distance between the discharge opening and the substrate, thedischarging speed of a composite, the atmosphere of the dischargingspace, the temperature or the humidity of the discharging space. Hence,it is desired to control these conditions. Optimum conditions arepreferably identified in advance by experiments or evaluations, andthese results are preferably databased per materials of the composite.

As a thin film pattern data, a circuit diagram or the like of an activematrix TFT substrate used for such as a liquid crystal display device oran electroluminescent display device can be nominated. FIG. 10 shows aschematic view of a circuit diagram in a circle for showing a conductivefilm used for such the active matrix TFT substrate. Reference numeral821 denotes a so-called gate wiring; 822, a source signal line (secondwiring); 823, a pixel electrode, or a hole injecting electrode or anelectron injecting electrode; 820, a substrate; and 824, an alignmentmarker. Of course, a thin film pattern 809 corresponds to the gatewiring 821 in thin film pattern information.

Further, the droplet discharging means 803 has, but not exclusively, anintegrated combination of nozzles 810, 811, and 812. Each nozzle has aplurality of discharge openings 813, 814, and 815. The foregoing thinfilm pattern 809 is formed by selecting a predetermined dischargeopening 813 in the nozzle 810.

The droplet discharging means 803 is preferably provided with aplurality of nozzles having different discharge openings, dischargequantity, or nozzle pitches to be able to manufacture thin film patternshaving various line widths and to improve tact time. The distancesbetween the discharge openings are preferably narrow as much aspossible. Further, a nozzle having a length of 1 m or more is preferablyprovided to the droplet discharging means 803 to conduct high throughputdischarging over a substrate having a size of from 1×1 m or more, or atwice or three times as large as that. The droplet discharging means 803may be retractable to control freely the distance between the dischargeopenings. To obtain high resolution, that is, to depict a smoothpattern, the nozzle or a head may be leaned. Accordingly, the drawing ona large area such as a rectangular area becomes possible.

Nozzles of the head having different pitches may be provided to one headin parallel. In this instance, discharge opening diameters may be thesame or different. In case of the droplet discharging device using aplurality of nozzles as above mentioned, it is required that a waitingposition for a nozzle not in use is provided. The waiting position canbe provided with a gas supplying means and a showerhead to substitutethe atmosphere in the waiting position for the atmosphere that is thesame as the gas of a solvent of the composite. Accordingly, thedesiccation can be prevented at some level. Moreover, a clean unit orthe like that supplies clean air to reduce dust in a work place may beprovided.

In case that the distances between discharge openings can not benarrowed due to the specifications of the nozzle 803, the pitch of anozzle may be designed to be integer multiple of a pixel in a displaydevice. Therefore, as shown in FIGS. 11A and 11B, a composite can bedischarged over the substrate 804 by shifting the substrate 804. As theimaging means 805, a camera using a semiconductor element that convertsthe strong and weak of light to an electric signal such as a CCD (chargecoupled device) can be used.

The foregoing method is to scan the fixed substrate 804 on a stage 816by the droplet discharging means 803 along with the determined path inorder to form the thin film pattern 809. On the other hand, the thinfilm pattern 809 may be formed in the procedure, that is, the dropletdischarging means 803 is fixed, and the stage 809 is transported in XYθdirections along with a path determined by the data 801 of a thin filmpattern. In case that the droplet discharging means 803 has a pluralityof nozzles, it is required to determine a nozzle having a dischargeopening with an optimum diameter, which stores a composite containing amaterial for forming the thin film or which is connected to a tank forstoring the composite.

Further, a plurality of nozzles having redundancy may be used. Forexample, when the nozzle 812 (or 811) discharges a composite firstly,discharge conditions may be controlled so that the nozzle 810 dischargesa composite simultaneously with the discharge of the nozzle 812 (or811). Accordingly, a composite can be discharged from the back nozzle810 despite that the front nozzle have some troubles such as theblockage in the discharge openings, and so it becomes possible at leastto prevent wirings from breaking or the like.

The foregoing method uses only one predetermined discharge opening ofthe nozzle 810 to form the thin film pattern 809. Alternatively, asshown in FIGS. 12A to 15C, a plurality of nozzles can be used todischarge a composite depending on the line width or thickness of a thinfilm to be formed.

FIGS. 12A to 12D and FIGS. 13A to 13C show that, for example, a pixelelectrode pattern 244 is formed over a substrate 240. Here, a dropletdischarging means 241 composed of a three nozzles 251 to 253 havingdifferent sizes of R₁, R₂, and R₃ (R₁>R₂>R₃) is used. Firstly, acomposite 245 is discharged by using the nozzle 251 having a dischargeopening with a maximum diameter (FIG. 12B or 13A). Next, the nozzle 252having a discharge opening with a smaller diameter than that of thenozzle 251 is used to discharge selectively a composite 246 at theportion that cannot be drawn or that is provided with irregularities bythe discharge opening with a maximum diameter (FIG. 12C or 13B).Thereafter, the surface of the pattern is smoothed as the need arises byselectively discharging a composite 247 with the nozzle 253 having adischarge opening with a minimum diameter (FIG. 12D or 13C). The methodcan be effectively used to manufacture a comparative big conductor suchas a pixel electrode. A planarized pattern with no irregularities can bemanufactured by this method.

FIG. 14 shows the state that a wiring pattern 248 is formed over thesubstrate 240. As the droplet discharging means, the foregoing nozzles251 to 253 are used. Since the quantity of each droplet 261 to 263discharged from these nozzles is different, a pattern with differentline widths can be easily manufactured as illustrated in FIG. 14.

FIGS. 15A to 15C show a method for forming, for example, a conductivefilm by sequentially discharging a composite to fill an opening portion213. Reference numeral 210 denotes a substrate; 211, a semiconductor ora conductor; and 212, an insulator. The insulator 212 is provided withan opening 213. The composite is discharged by a droplet dischargingmeans comprising a plurality of nozzles 251 to 253 arranged in aplurality of lines having discharging openings arranged in uniaxialdirection at the foregoing each line. The diameter of the openingbecomes large toward the bottom to the top. Firstly, the opening 213 isfilled with a composite up to the bottom by the nozzle 253 having adischarge opening with a diameter of R₃ (FIG. 15A). Then, the opening213 is filled with a composite up to the middle by the nozzle 252 havinga discharge opening with a diameter of R₂ (FIG. 15B). And then, theopening 213 is filled with a composite up to the top by the nozzle 251having a discharge opening with a diameter of R₁ (FIG. 15C). Accordingto this method, a planarized conductive layer can be formed bydischarging a composite to fill the opening. Therefore, the insulator212 having an opening with a high aspect ratio can be provided with aplanarization wiring without generating a void.

As mentioned above, a droplet discharging system used for forming a thinfilm or a wiring comprises an inputting means for inputting data forshowing a thin film pattern; a setting means for setting a moving pathof a nozzle for discharging a composite containing a material forforming the thin film; an imaging means for detecting an alignmentmarker formed over a substrate; and a controlling means for controllingmoving path of the nozzle. Therefore, a nozzle or a moving path of asubstrate in droplet discharging is required to be accuratelycontrolled. By installing a program for controlling conditions ofdischarging a composite to a computer for controlling the dropletdischarging system, conditions such as a moving speed of a substrate ora nozzle, discharge quantity, a spray distance, spray speed, a dischargeatmosphere, discharge temperature, discharge humidity, heatingtemperature for a substrate, and the like can be accurately controlled.

Accordingly, a high throughput manufacture for a short tact time of athin film or a wiring having a desired width, thickness, and form can beprecisely conducted at a desired portion. Moreover, manufacturing yieldsof a semiconductor element such as a TFT manufactured by using the thinfilm or the wiring; a light-emitting device such as a liquid crystaldisplay or an organic electroluminescent display manufactured by usingthe semiconductor element; an LSI; or the like can be improved.Especially, according to the present invention, a thin film or a wiringcan be formed at any portion, and a width, a thickness, and a form ofthe pattern can be controlled. Therefore, a large area's semiconductorelement substrate having the size of from 1×1 m or more, or a twice orthree times as large as that can be manufactured at low costs in highyields.

INDUSTRIAL APPLICABILITY

According to the present invention, a source region and a drain regionare formed by the foregoing method, and the portion for serving as achannel region is covered by an insulating film serving as a channelprotecting film to form an island-like semiconductor film. Accordingly,a process can be simplified since a resist mask is not required. Asmentioned above, one aspect of the present invention is to provide anovel means for forming a semiconductor element by combining a methodfor removing a single conductivity semiconductor film using a metal maskof a source electrode and a drain electrode, and a method, which isspecific to a channel protective type, for forming a channel protectivefilm to prevent a channel region from removing. A semiconductor elementcan be manufactured by using only a metal mask of a source electrode anda drain electrode without using any resist mask according to theforegoing structure. Therefore, the semiconductor element and the methodfor manufacturing the semiconductor element are useful for providing anoptimum structure and a process having the proper conditions to beactively formed by droplet discharging.

1. A semiconductor element comprising: a layer comprising titaniumformed over a substrate; a gate electrode layer formed over the layer; agate insulating film formed over the gate electrode layer; asemiconductor film formed over the gate insulating film; a pair ofn-type impurity regions formed over the semiconductor film; aninsulating film that is interposed between the pair of n-type impurityregions and that is formed over the semiconductor film; and a conductivelayer formed over the pair of n-type impurity regions.
 2. Asemiconductor element comprising: a layer comprising titanium formedover a substrate; a gate electrode layer formed over the layer; a gateinsulating film formed over the gate electrode layer; a semiconductorfilm formed over the gate insulating film; a pair of n-type impurityregions formed over the semiconductor film; an insulating film having athickness of 100 nm or more that is interposed between the pair ofn-type impurity regions and that is formed over the semiconductor film;and a conductive layer formed over the pair of n-type impurity regions.3. A semiconductor element comprising: a layer comprising titaniumformed over a substrate; a gate electrode layer formed over the layer; agate insulating film formed over the gate electrode layer; asemiconductor film formed over the gate insulating film; a pair ofn-type impurity regions formed over the semiconductor film; aninsulating film that is interposed between the pair of n-type impurityregions and that is formed over the semiconductor film; and a conductivelayer formed over the pair of n-type impurity regions; wherein athickness of a portion of the semiconductor film over which theinsulating film is formed is thinner than that of the othersemiconductor film, and the semiconductor film over which the insulatingfilm is formed has a thickness of 10 nm or more.
 4. A semiconductorelement according to any one of claims 1 to 3, wherein the insulatingfilm comprises at least one selected from the group consisting ofpolyimide, acrylic, and a material which has a skeleton formed by a bondof silicon and oxygen, and which includes at least hydrogen as asubstituent, or at least one selected from the group consisting offluoride, alkyl group, and aromatic hydrocarbon as a substituent.
 5. Asemiconductor element according to any one of claims 1 to 3, wherein thelayer comprises titanium oxide.
 6. A semiconductor element according toany one of claims 1 to 3, wherein the semiconductor element isincorporated in at least one selected from the group consisting of a TVreception set, an electronic book and a cellular phone.
 7. A method formanufacturing a semiconductor element comprising: forming a gateelectrode layer by discharging a composite containing a first conductivematerial over a substrate; forming a gate insulating film over the gateelectrode layer; forming a semiconductor film over the gate insulatingfilm; forming a semiconductor film containing an impurity element havinga conductivity type over the semiconductor film; forming a sourceelectrode and a drain electrode by discharging a composite containing asecond conducive material over the semiconductor film containing theimpurity element having the conductivity type; forming an insulatingfilm over a portion of the semiconductor film; and forming anisland-like semiconductor film by removing the semiconductor film usingthe source electrode, the drain electrode, and the insulating film asmasks.
 8. A method for manufacturing a semiconductor element comprising:forming a layer comprising titanium over at least a portion of asubstrate; forming a gate electrode layer by discharging a compositecontaining a first conductive material over the layer; forming a gateinsulating layer over the gate electrode layer; forming a semiconductorfilm over the gate insulating layer; forming a semiconductor filmcontaining an impurity element having a conductivity type over thesemiconductor film; forming a source electrode and a drain electrode bydischarging a composite containing a second conductive material over thesemiconductor film containing the impurity element having theconductivity type; forming a source region and a drain region byremoving the semiconductor film containing the impurity element havingthe conductivity type using the source electrode and the drain electrodeas masks; forming an insulating film over a portion of the semiconductorfilm; and forming an island-like semiconductor film by removing thesemiconductor film using the source electrode, the drain electrode, andthe insulating film as masks.
 9. A method for manufacturing asemiconductor element according to claim 7 or 8, wherein the insulatingfilm comprises at least one selected from the group consisting ofpolyimide, acrylic, and a material which has a skeleton formed by a bondof silicon and oxygen, and which includes at least hydrogen as asubstituent, or at least one selected from the group consisting offluoride, alkyl group, and aromatic hydrocarbon as a substituent.
 10. Amethod for manufacturing a semiconductor element according to claim 7 or8, wherein the portion comprises a channel region.
 11. A method formanufacturing a semiconductor element according to claim 8, wherein thelayer comprises titanium oxide.
 12. A method for manufacturing asemiconductor element according to claim 7 or 8, wherein thesemiconductor element is incorporated in at least one selected from thegroup consisting of a TV reception set, an electronic book and acellular phone.
 13. A liquid crystal display device comprising: a layercomprising titanium formed over a substrate; a gate electrode layerformed over the layer; a gate insulating film formed over the gateelectrode layer; a semiconductor film formed over the gate insulatingfilm; a pair of n-type impurity regions formed over the semiconductorfilm; an insulating film that is interposed between the pair of n-typeimpurity regions and that is formed over the semiconductor film; aconductive layer formed over the pair of n-type impurity regions; and apixel electrode electrically connected to the conductive layer.
 14. Aliquid crystal display device comprising: a layer comprising titaniumformed over a substrate; a gate electrode layer formed over the layer; agate insulating film formed over the gate electrode layer; asemiconductor film formed over the gate insulating film; a pair ofn-type impurity regions formed over the semiconductor film; aninsulating film having a thickness of 100 nm or more that is interposedbetween the pair of n-type impurity regions and that is formed over thesemiconductor film; a conductive layer formed over the pair of n-typeimpurity regions; and a pixel electrode electrically connected to theconductive layer.
 15. A liquid crystal display device comprising: alayer comprising titanium formed over a substrate; a gate electrodelayer formed over the layer; a gate insulating film formed over the gateelectrode layer; a semiconductor film formed over the gate insulatingfilm; a pair of n-type impurity regions formed over the semiconductorfilm; an insulating film that is interposed between the pair of n-typeimpurity regions and that is formed over the semiconductor film; aconductive layer formed over the pair of n-type impurity regions; and apixel electrode electrically connected to the conductive layer; whereina thickness of a portion of the semiconductor film over which theinsulating film is formed is thinner than that of the othersemiconductor film, and the semiconductor film over which the insulatingfilm is formed has a thickness of 10 nm or more.
 16. A liquid crystaldisplay device according to any one of claims 13 to 15, wherein theinsulating film comprises at least one selected from the groupconsisting of polyimide, acrylic, and a material which has a skeletonformed by a bond of silicon and oxygen, and which includes at leasthydrogen as a substituent, or at least one selected from the groupconsisting of fluoride, alkyl group, and aromatic hydrocarbon as asubstituent.
 17. A liquid crystal display device according to any one ofclaims 13 to 15, wherein the layer comprises titanium oxide.
 18. Aliquid crystal display device according to any one of claims 13 to 15,wherein the liquid crystal display device is incorporated in at leastone selected from the group consisting of a TV reception set, anelectronic book and a cellular phone.
 19. A method for manufacturing aliquid crystal display device comprising: forming a gate electrode layerby discharging a composite containing a first conductive material over asubstrate; forming a gate insulating film over the gate electrode layer;forming a semiconductor film over the gate insulating film; forming asemiconductor film containing an impurity element having a conductivitytype over the semiconductor film; forming a source electrode and a drainelectrode by discharging a composite containing a second conducivematerial over the semiconductor film containing the impurity elementhaving the conductivity type; forming a source region and a drain regionby removing the semiconductor film containing the impurity elementhaving the conductivity type using the source electrode and the drainelectrode as masks; forming an insulating film over a portion of thesemiconductor film; forming an island-like semiconductor film byremoving the semiconductor film using the source electrode, the drainelectrode, and the insulating film as masks; and forming a pixelelectrode electrically connected to one of the source electrode and thedrain electrode.
 20. A method for manufacturing a liquid crystal displaydevice comprising: forming a layer comprising titanium over at least aportion of a substrate; forming a gate electrode layer by discharging acomposite containing a first conductive material over the layer; forminga gate insulating layer over the gate electrode layer; forming asemiconductor film over the gate insulating layer; forming asemiconductor film containing an impurity element having a conductivitytype over the semiconductor film; forming a source electrode and a drainelectrode by discharging a composite containing a second conductivematerial over the semiconductor film containing the impurity elementhaving the conductivity type; forming a source region and a drain regionby removing the semiconductor film containing the impurity elementhaving the conductivity type using the source electrode and the drainelectrode as masks; forming an insulating film over a portion of thesemiconductor film; forming an island-like semiconductor film byremoving the semiconductor film using the source electrode, the drainelectrode, and the insulating film as masks; and forming a pixelelectrode electrically connected to one of the source electrode and thedrain electrode.
 21. A method for manufacturing a liquid crystal displaydevice according to claim 19 or 20, wherein the insulating filmcomprises at least one selected from the group consisting of polyimide,acrylic, and a material which has a skeleton formed by a bond of siliconand oxygen, and which includes at least hydrogen as a substituent, or atleast one selected from the group consisting of fluoride, alkyl group,and aromatic hydrocarbon as a substituent.
 22. A method formanufacturing a liquid crystal display device according to claim 19 or20, wherein the portion comprises a channel region.
 23. A method formanufacturing a liquid crystal display device according to claim 20,wherein the layer comprises titanium oxide.
 24. A method formanufacturing a liquid crystal display device according to claim 19 or20, wherein the liquid crystal display device is incorporated in atleast one selected from the group consisting of a TV reception set, anelectronic book and a cellular phone.